Morehead State University

Poster Title

Sputter Deposition of Indium-doped Iron Oxide Films for Photoelectrochemical Hydrogen Production

Institution

Morehead State University

Abstract

Indium-doped iron oxide (Fe2O3) films were created by radio frequency powered DC magnetron sputter deposition. The process of sputtering involves depositing thin metal films and insulators onto a substrate. The temperatures during deposition ranged from 150ºC to 250ºC. The deposition rate of Fe2O3 was 100W and ranged from 5W to 20W for indium. The samples were created in both an argon atmosphere and an argon/oxygen atmosphere. The effects of the indium doping on iron oxide’s conductibility, band gap, stability, and photoactivity in a 5.9M potassium hydroxide solution were examined. The purpose of this study involves the future use of these films in amorphous silicon triplejunction solar cells.

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Sputter Deposition of Indium-doped Iron Oxide Films for Photoelectrochemical Hydrogen Production

Indium-doped iron oxide (Fe2O3) films were created by radio frequency powered DC magnetron sputter deposition. The process of sputtering involves depositing thin metal films and insulators onto a substrate. The temperatures during deposition ranged from 150ºC to 250ºC. The deposition rate of Fe2O3 was 100W and ranged from 5W to 20W for indium. The samples were created in both an argon atmosphere and an argon/oxygen atmosphere. The effects of the indium doping on iron oxide’s conductibility, band gap, stability, and photoactivity in a 5.9M potassium hydroxide solution were examined. The purpose of this study involves the future use of these films in amorphous silicon triplejunction solar cells.